Top 10 IGBT Brand & Manufacturers

What is IGBT?

IGBT, short for Insulated Gate Bipolar Transistor, is a fully - controlled voltage - driven power semiconductor device. It combines the advantages of a Bipolar Junction Transistor (BJT) and a Metal - Oxide - Semiconductor Field - Effect Transistor (MOSFET). It has a high - impedance gate like a MOSFET, enabling easy control with a small input signal, and low - on - state voltage drop like a BJT, making it efficient for power - handling applications.

History of IGBT

• Initial Invention: In 1979 - 1980, Professor B. Jayant Baliga from North Carolina State University in the United States successfully developed the IGBT. This was a significant milestone in power semiconductor technology.
• Early Production: In 1982, RCA and GE produced the first - generation IGBTs. These early devices were the starting point for the wide - spread application of IGBTs in various electrical systems.
• Evolution of Technology:
  • In 1988, the first - generation planar - gate (PT) IGBT was released. It laid the foundation for subsequent improvements.
  • In 1990, the second - generation planar - gate punch - through (PT) epitaxial - substrate IGBT with a buffer layer, precise pattern control, and minority - carrier lifetime control was introduced, enhancing performance.
  • In 1992, the third - generation trench - gate IGBT was launched, bringing new design concepts and better characteristics.
  • In 1997, the fourth - generation non - punch - through (NPT) IGBT was released, which had different structural and performance features compared to previous generations.
  • In 2001, the fifth - generation field - stop (FS) IGBT was introduced, further improving the device's performance in certain aspects.
  • In 2003, the sixth - generation trench - type field - stop (FS - TrenchI) IGBT was released, representing continuous innovation in IGBT technology.

Purpose of IGBT

IGBTs are mainly used in frequency - conversion and inversion circuits. They can convert DC voltage into AC voltage with adjustable frequency. They are widely applied in various electrical fields such as rail transportation, smart grids, aerospace, electric vehicles, and new - energy equipment. In electric vehicles, for example, IGBTs are used in the motor - drive system to control the speed and torque of the electric motor. In power grids, they are used in power - conversion stations to adjust the power flow and voltage levels.

Principle of IGBT

When a positive voltage is applied to the gate (G) of the IGBT, an inversion layer is formed on the semiconductor surface below the gate. This is equivalent to creating a conductive channel between the P - type semiconductor and the N - type drift region. As a result, the IGBT turns on, and current can flow from the collector (C) to the emitter (E). When the gate voltage is 0 or a negative voltage is applied, the channel disappears, and the IGBT turns off, blocking the current flow.

Features of IGBT

• High Input Impedance: Similar to MOSFETs, IGBTs have a high input impedance. This means that only a small control current is required to turn the device on and off, reducing the power consumption of the control circuit.
• Low On - State Voltage Drop: When conducting, IGBTs have a relatively low voltage drop. This is beneficial for reducing power losses, especially in high - current applications. For example, in high - power industrial motors, the low on - state voltage drop of IGBTs can save a significant amount of energy.
• Fast Switching Speed: IGBTs can switch between the on and off states in a short time. This makes them suitable for high - frequency applications. In applications such as high - frequency inverters, the fast - switching speed of IGBTs enables efficient power conversion.
• Large Current - Carrying Capacity: IGBTs can handle large currents. They are designed to meet the requirements of high - power applications, such as power - generation systems and large - scale industrial equipment that require substantial current - carrying capabilities.

Types of IGBT

• PT (Punch - Through) IGBT: The PT IGBT has a relatively simple structure. It has a thin N - type drift region, which allows for a lower on - state voltage drop. However, it may have some limitations in terms of reverse - voltage blocking capability and switching speed.
• NPT (Non - Punch - Through) IGBT: NPT IGBTs have a thicker N - type drift region compared to PT IGBTs. This gives them better reverse - voltage blocking capabilities and faster switching speeds. They are often used in applications where high - speed switching and high - voltage blocking are required.
• FS (Field - Stop) IGBT: FS IGBTs incorporate a field - stop layer. This layer helps to improve the device's performance in terms of both on - state voltage drop and switching speed. They are suitable for applications that demand a balance between power - handling efficiency and switching performance.[!--empirenews.page--]

Precautions for using IGBT

• Voltage and Current Limitations: IGBTs have specified maximum voltage and current ratings. Exceeding these limits can cause device failure. It is crucial to ensure that the operating voltage and current in the circuit are within the rated range of the IGBT. For example, in a power - conversion circuit, proper circuit design and protection mechanisms should be in place to prevent over - voltage and over - current situations.
• Temperature Management: IGBTs generate heat during operation. Effective heat - dissipation measures are necessary to keep the device within the allowable temperature range. Using heat sinks, fans, or liquid - cooling systems can help dissipate the heat. High temperatures can affect the performance and reliability of IGBTs, and in extreme cases, can lead to device burnout.
• Gate - Drive Circuit Design: The gate - drive circuit is crucial for the proper operation of IGBTs. It should provide the correct voltage levels and rise/fall times for the gate signal. Incorrect gate - drive signals can cause issues such as slow switching, increased power losses, and even device failure. The gate - drive circuit should be designed to be stable and immune to electrical interference.
• Electrostatic Discharge (ESD) Protection: IGBTs are sensitive to electrostatic discharge. Precautions should be taken to prevent ESD during handling, installation, and maintenance. Using anti - static wrist straps, grounding mats, and proper packaging can help protect the IGBT from ESD damage.

Things to consider when purchasing IGBT

• Application Requirements: Determine the specific needs of your application. Consider factors such as the operating voltage, current, switching frequency, and power - handling requirements. For a high - power motor - drive application, you need an IGBT with a high current - carrying capacity and suitable switching speed.
• Type of IGBT: Based on your application, choose the appropriate type of IGBT. PT, NPT, and FS IGBTs have different characteristics. If you need a device with a low on - state voltage drop for a power - generation application, a PT IGBT might be considered. For high - speed switching applications, an NPT or FS IGBT could be more suitable.
• Performance Parameters: Look at parameters such as on - state voltage drop, switching time, reverse - voltage blocking capability, and thermal resistance. These parameters should meet the requirements of your application. A lower on - state voltage drop can reduce power losses, while a shorter switching time is beneficial for high - frequency applications.
• Cost and Budget: Establish a budget for the IGBT purchase. The cost of IGBTs can vary depending on their type, performance, and brand. Consider not only the initial purchase price but also the long - term costs such as maintenance and replacement. Sometimes, a more expensive IGBT with better performance and reliability may be a more cost - effective choice in the long run.
• Manufacturer Reputation and Support: Select a reputable manufacturer that provides good technical support. The manufacturer should offer resources such as datasheets, application notes, and customer support. A reliable manufacturer can ensure the quality of the IGBTs and provide assistance in case of any issues.

Terms of IGBT

• On - State Voltage Drop ($V_{CE(sat)}$): The voltage drop across the collector and emitter of the IGBT when it is in the conducting state. A lower value indicates less power loss during conduction.
• Switching Time: The time it takes for the IGBT to transition between the on and off states. It includes the turn - on time ($t_{on}$) and turn - off time ($t_{off}$). Shorter switching times are desirable for high - frequency applications.
• Reverse - Voltage Blocking Capability ($V_{CES}$): The maximum voltage that the IGBT can block in the reverse direction. This is an important parameter for ensuring the safety and reliability of the device in a circuit.
• Thermal Resistance ($R_{th(j - c)}$): A measure of the resistance to heat transfer from the junction of the IGBT to the case. Lower thermal resistance means better heat dissipation, which helps in maintaining the device's operating temperature.
• Gate - Threshold Voltage ($V_{GE(th)}$): The minimum voltage required at the gate of the IGBT to turn it on. It is an important parameter for the design of the gate - drive circuit.